发明名称 パワー半導体モジュール
摘要 Embodiments of the invention provide a power semiconductor module wherein it is possible to reduce switching noise generated in a switching element, and at the same time, to reduce thermal resistance between a power semiconductor chip and an insulating substrate. In some embodiments, by a capacitor being installed between a printed substrate and an insulating substrate so as to be adjacent to a power semiconductor chip which is a switching element, it is possible to reduce switching noise generated in the switching element, and furthermore, it is possible to reduce thermal resistance between the power semiconductor chip and insulating substrate.
申请公布号 JP5915350(B2) 申请公布日期 2016.05.11
申请号 JP20120095791 申请日期 2012.04.19
申请人 富士電機株式会社 发明人 堀 元人;池田 良成;山田 教文
分类号 H01L25/07;H01L23/36;H01L25/18;H02M7/48 主分类号 H01L25/07
代理机构 代理人
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