Metal lines having etch-bias independent height

摘要

A dielectric material stack including at least a via level dielectric material layer, at least one patterned etch stop dielectric material portion, a line level dielectric material layer, and optionally a dielectric cap layer is formed over a substrate. At least one patterned hard mask layer including a first pattern can be formed above the dielectric material stack. A second pattern is transferred through the line level dielectric material layer employing the at least one etch stop dielectric material portion as an etch stop structure. The first pattern is transferred through the line level dielectric material layer employing the at least one etch stop dielectric material portion as an etch stop structure while the second pattern is transferred through the via level dielectric material layer to form integrated line and via trenches, which are filled with a conductive material to form integrated line and via structures.

主权项

1. A structure comprising:
a dielectric material stack including, from bottom to top, at least a via level dielectric material layer, at least one etch stop dielectric material portion, and a line level dielectric material layer located over a substrate, wherein said at least one etch stop dielectric material portion has a bottom surface located directly on a top surface of said via level dielectric and wherein a top surface and a vertical sidewall edge of said at least one etch stop dielectric material portion is in contact with a portion of said line level dielectric material layer; and an integrated line and via structure embedded within said dielectric material stack and comprising at least one metallic via structure and a metallic line structure, wherein said at least one metallic via structure is embedded within said via level dielectric material layer, said metallic line structure is embedded within said line level dielectric material layer, and said at least one etch stop dielectric material portion laterally surrounds said metallic line structure, wherein a bottommost surface of the line level dielectric material layer is coplanar with the bottom surface of the at least one etch stop dielectric material portion, and wherein a top surface of the line level dielectric material layer is coplanar with a top surface of the metallic line structure, and wherein the bottommost surface of the line level dielectric material layer is coplanar with a bottom surface of the metallic line structure.