| 摘要 |
Thermo-migration induced stress in a power device can be mitigated by deactivating a subset of a power device component (e.g., a transistor, etc.) when the power device experiences a high stress condition. Deactivating the subset of power device component is provided to bifurcate an active area of a power switching device into smaller active regions, which advantageously changes a temperature gradient in the active area/region. In some embodiments of the present invention, a control circuit dynamically deactivates different subsets of the power device component to shift thermo-migration induced stress points to different portions of the active region during the lifetime of the power switching device. |
