发明名称 Electronic circuit with a reverse-conducting IGBT and gate driver circuit
摘要 An electronic circuit includes a reverse-conducting IGBT and a driver circuit. A first diode emitter efficiency of the reverse-conducting IGBT at a first off-state gate voltage differs from a second diode emitter efficiency at a second off-state gate voltage. A driver terminal of the driver circuit is electrically coupled to a gate terminal of the reverse-conducting IGBT. In a first state the driver circuit supplies an on-state gate voltage at the driver terminal. In a second state the driver circuit supplies the first off-state gate voltage, and in a third state the driver circuit supplies the second off-state gate voltage at the driver terminal. The reverse-conducting IGBT may be operated in different modes such that, for example, overall losses may be reduced.
申请公布号 US9337827(B2) 申请公布日期 2016.05.10
申请号 US201313941797 申请日期 2013.07.15
申请人 Infineon Technologies AG 发明人 Werber Dorothea
分类号 H03K3/00;H03K17/567;H01L29/739;H01L29/06;H01L29/08 主分类号 H03K3/00
代理机构 Murphy, Bilak & Homiller, PLLC 代理人 Murphy, Bilak & Homiller, PLLC
主权项 1. An electronic circuit comprising: a reverse-conducting IGBT having a first diode emitter efficiency at a first off-state gate voltage and having a second, different diode emitter efficiency at a second off-state gate voltage; and a driver circuit comprising a driver terminal electrically coupled to a gate terminal of the reverse-conducting IGBT, wherein the driver circuit is configured to drive, at the driver terminal, an on-state gate voltage in a first state, the first off-state gate voltage in a second state, and the second off-state gate voltage in a third state.
地址 Neubiberg DE