发明名称 |
Electronic circuit with a reverse-conducting IGBT and gate driver circuit |
摘要 |
An electronic circuit includes a reverse-conducting IGBT and a driver circuit. A first diode emitter efficiency of the reverse-conducting IGBT at a first off-state gate voltage differs from a second diode emitter efficiency at a second off-state gate voltage. A driver terminal of the driver circuit is electrically coupled to a gate terminal of the reverse-conducting IGBT. In a first state the driver circuit supplies an on-state gate voltage at the driver terminal. In a second state the driver circuit supplies the first off-state gate voltage, and in a third state the driver circuit supplies the second off-state gate voltage at the driver terminal. The reverse-conducting IGBT may be operated in different modes such that, for example, overall losses may be reduced. |
申请公布号 |
US9337827(B2) |
申请公布日期 |
2016.05.10 |
申请号 |
US201313941797 |
申请日期 |
2013.07.15 |
申请人 |
Infineon Technologies AG |
发明人 |
Werber Dorothea |
分类号 |
H03K3/00;H03K17/567;H01L29/739;H01L29/06;H01L29/08 |
主分类号 |
H03K3/00 |
代理机构 |
Murphy, Bilak & Homiller, PLLC |
代理人 |
Murphy, Bilak & Homiller, PLLC |
主权项 |
1. An electronic circuit comprising:
a reverse-conducting IGBT having a first diode emitter efficiency at a first off-state gate voltage and having a second, different diode emitter efficiency at a second off-state gate voltage; and a driver circuit comprising a driver terminal electrically coupled to a gate terminal of the reverse-conducting IGBT, wherein the driver circuit is configured to drive, at the driver terminal, an on-state gate voltage in a first state, the first off-state gate voltage in a second state, and the second off-state gate voltage in a third state. |
地址 |
Neubiberg DE |