发明名称 |
Substrate device and method for manufacturing same |
摘要 |
The present invention allows a current leakage path to be reliably disconnected even when a conductive film residue occurs between data wiring lines. An interlayer insulating film of a TFT panel includes an interlayer insulating film opening at a position corresponding to a pattern edge of an insulating protective film. |
申请公布号 |
US9337216(B2) |
申请公布日期 |
2016.05.10 |
申请号 |
US201314433906 |
申请日期 |
2013.10.09 |
申请人 |
Sharp Kabushiki Kaisha |
发明人 |
Furukawa Hiroaki |
分类号 |
H01L21/311;H01L27/12;G02F1/1362;H01L29/66;H01L29/786 |
主分类号 |
H01L21/311 |
代理机构 |
Keating & Bennet, LLP |
代理人 |
Keating & Bennet, LLP |
主权项 |
1. A substrate device comprising:
a first insulating film; a plurality of wiring lines which extend on a surface of the first insulating film, the plurality of wiring lines being adjacent to each other so as to have a predetermined distance therebetween; a second insulating film which covers all of respective portions of the plurality of wiring lines, so that a slope of the second insulating film is formed on the plurality of wiring lines, the respective portions of the plurality of wiring lines each having a length that is a part of an entire length of each of the plurality of wiring lines; and a conductive pattern formed on a surface of the second insulating film, the surface of the first insulating film having an opening which is provided at a position (1) that corresponds to the slope of the second insulating film and (2-a) that corresponds to at least one of two adjacently extending wiring lines of the plurality of wiring lines or (2-b) that is between two adjacently extending wiring lines of the plurality of wiring lines. |
地址 |
Osaka JP |