发明名称 Substrate device and method for manufacturing same
摘要 The present invention allows a current leakage path to be reliably disconnected even when a conductive film residue occurs between data wiring lines. An interlayer insulating film of a TFT panel includes an interlayer insulating film opening at a position corresponding to a pattern edge of an insulating protective film.
申请公布号 US9337216(B2) 申请公布日期 2016.05.10
申请号 US201314433906 申请日期 2013.10.09
申请人 Sharp Kabushiki Kaisha 发明人 Furukawa Hiroaki
分类号 H01L21/311;H01L27/12;G02F1/1362;H01L29/66;H01L29/786 主分类号 H01L21/311
代理机构 Keating & Bennet, LLP 代理人 Keating & Bennet, LLP
主权项 1. A substrate device comprising: a first insulating film; a plurality of wiring lines which extend on a surface of the first insulating film, the plurality of wiring lines being adjacent to each other so as to have a predetermined distance therebetween; a second insulating film which covers all of respective portions of the plurality of wiring lines, so that a slope of the second insulating film is formed on the plurality of wiring lines, the respective portions of the plurality of wiring lines each having a length that is a part of an entire length of each of the plurality of wiring lines; and a conductive pattern formed on a surface of the second insulating film, the surface of the first insulating film having an opening which is provided at a position (1) that corresponds to the slope of the second insulating film and (2-a) that corresponds to at least one of two adjacently extending wiring lines of the plurality of wiring lines or (2-b) that is between two adjacently extending wiring lines of the plurality of wiring lines.
地址 Osaka JP