| 发明名称 |
Semiconductor device with epitaxial structures |
| 摘要 |
A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a cap. The fin-shaped structures are disposed on a substrate and are covered by the gate structure. The epitaxial structures spaced apart from each other are disposed at one side of the gate structure and respectively directly contact each fin-shaped structure. The cap simultaneously surrounds the epitaxial structures, and at least two adjacent caps are merged together. |
| 申请公布号 |
US9337193(B2) |
申请公布日期 |
2016.05.10 |
| 申请号 |
US201514637412 |
申请日期 |
2015.03.04 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Liao Chin-I;Chen Chun-Yu |
| 分类号 |
H01L29/66;H01L27/088;H01L29/417;H01L29/78;H01L29/16;H01L29/161;H01L29/165;H01L29/267 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor device, comprising:
at least two fin-shaped structures, disposed on a substrate; a gate structure, covering the fin-shaped structures; at least two epitaxial structures, disposed at one side of the gate structure and respectively directly contacting each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other; and at least two caps, respectively surrounding the epitaxial structures, wherein at least two adjacent caps are merged together. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
