| 发明名称 | Transistors, methods of forming transistors and display devices having transistors | ||
| 摘要 | A transistor, a display device, and associated methods, the transistor including a substrate; an active layer pattern disposed on the substrate, the active layer pattern including silicon and graphene; a gate insulating layer disposed on the active layer pattern; a gate electrode disposed on the gate insulating layer; an insulating interlayer covering the active layer pattern and the gate electrode; and a source electrode and a drain electrode in contact with the active layer pattern. | ||
| 申请公布号 | US9337280(B2) | 申请公布日期 | 2016.05.10 |
| 申请号 | US201414206071 | 申请日期 | 2014.03.12 |
| 申请人 | SAMSUNG DISPLAY CO., LTD. | 发明人 | Lee Jin-Woo;Kim Moo-Jin |
| 分类号 | H01L29/06;H01L29/267;H01L29/66;H01L29/165;H01L29/786;H01L29/778;H01L29/10;H01L29/16 | 主分类号 | H01L29/06 |
| 代理机构 | Lee & Morse, P.C. | 代理人 | Lee & Morse, P.C. |
| 主权项 | 1. A transistor, comprising: a substrate; an active layer pattern disposed on the substrate, the active layer pattern including silicon and graphene overlapping the gate electrode; a gate insulating layer disposed on the active layer pattern; a gate electrode disposed on the gate insulating layer; an insulating interlayer covering the active layer pattern and the gate electrode; and a source electrode and a drain electrode in contact with the active layer pattern. | ||
| 地址 | Yongin, Gyeonggi-Do KR | ||