| 发明名称 | Semiconductor devices and methods of manufacture thereof | ||
| 摘要 | Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece including a gate dielectric and a gate disposed over the gate dielectric, and reshaping a top surface of the gate to form a gate with a rounded profile. | ||
| 申请公布号 | US9337195(B2) | 申请公布日期 | 2016.05.10 |
| 申请号 | US201314133375 | 申请日期 | 2013.12.18 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lin Yu Chao;Chang Ming-Ching;Lu I-Yin;Lin Jih-Jse;Chen Chao-Cheng |
| 分类号 | H01L23/02;H01L27/092;H01L27/088;H01L21/8234;H01L21/8238;H01L21/3213;H01L21/311 | 主分类号 | H01L23/02 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method of manufacturing a semiconductor device, the method comprising: providing a workpiece including a gate dielectric and a gate disposed over the gate dielectric; reshaping a top surface of the gate to form a gate with a rounded profile; and etching a via and forming a contact therein, wherein the contact is disposed on at least a portion of the rounded profile of the gate. | ||
| 地址 | Hsin-Chu TW | ||