| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve reduction in area while maintaining ESD resistance.SOLUTION: A semiconductor device comprises a power source interconnection, a ground interconnection and a protection circuit. The protection circuit includes: a first transistor connected between the power source interconnection and the ground interconnection; a first resistive element connected with the first transistor in series between the power source interconnection and the ground interconnection; a second transistor connected with the first transistor in parallel between the power source interconnection and the ground interconnection so as to form a current mirror circuit with the first transistor with a gate being connected with a first connection node between the first transistor and the first resistive element; a first capacitive element connected with the second transistor in series between the power source interconnection and the ground interconnection; a first inverter; and a protective transistor which is connected between the power source interconnection and the ground interconnection and as a gate which receives an output of the first inverter. A gate width of the second transistor is smaller than a gate width of the first transistor.SELECTED DRAWING: Figure 3 |
