| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which inhibits deterioration in threshold voltage to achieve a favorable transistor operation.SOLUTION: A semiconductor device comprises a gate electrode 10, a first insulation film 210 (gate insulation film), an oxide semiconductor film 220, a second insulation film 230, a source electrode 13, source wiring 12, a drain electrode 15 and drain wiring 14. The first insulation film is arranged on the gate electrode. The oxide semiconductor film is arranged on the first insulation film. The second insulation film is arranged on the oxide semiconductor film. The source electrode is arranged in the second insulation film to be connected to the oxide semiconductor film. The source wiring is arranged on the second insulation film so as not to overlap a channel part to be connected to the source electrode. The drain electrode is arranged in the second insulation film to be connected to the oxide semiconductor film. The drain wiring is arranged on the second insulation film so as not to overlap the channel part to be connected to the drain electrode.SELECTED DRAWING: Figure 1 |
