SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To achieve a uniform temperature in a gas introduction part and inhibit thermal fatigue breaking of the gas introduction part.SOLUTION: A SiC layer manufacturing apparatus 1 comprises a resistance heating heater 5 along a gas introduction part 4. This suppresses a temperature distribution on the gas introduction part 4 in a vertical direction and enables inhibition of thermal fatigue breaking of the gas introduction part 4. According to the SiC layer manufacturing apparatus 1, uniform temperature in the gas introduction part 4 can be achieved and thermal fatigue breaking of the gas introduction part 4 can be inhibited.SELECTED DRAWING: Figure 1