| 摘要 |
PROBLEM TO BE SOLVED: To provide a low noise high-sensitivity inertial sensor.SOLUTION: Moving sections VU1 and VU2 are assumed to be formed in the same SOI layer. While being electrically isolated, the moving sections VU1 and VU2 are mechanically connected by a mechanical connecting unit MCU. As a result, a sensor element SE allows difference in electrostatic capacitance between MEMS capacitance 1 and MEMS capacitance 2 to be suppressed.SELECTED DRAWING: Figure 4 |
