| 发明名称 |
SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING A SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS |
| 摘要 |
Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode. |
| 申请公布号 |
US2016126266(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201614993851 |
申请日期 |
2016.01.12 |
| 申请人 |
Sony Corporation |
发明人 |
Kato Nanako;Wakano Toshifumi |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An imaging device comprising a plurality of pixels, at least one of the plurality of pixels including:
a photo diode; a memory; a transistor configured to transfer charge from the photo diode to the memory; and a film including a metal and disposed between the memory and the photo diode. |
| 地址 |
Tokyo JP |
