发明名称 METHOD FOR FORMING A VARIABLE THICKNESS DIELECTRIC STACK
摘要 Producing a variable thickness dielectric stack includes providing a substrate with a first patterned conductive layer thereon. A first dielectric thin film is deposited using ALD and a first patterned deposition inhibitor layer, which is subsequently removed, to form a first patterned conformal dielectric layer having a first pattern. A second dielectric thin film is deposited using ALD and a second patterned deposition inhibitor layer to form a second patterned conformal dielectric layer having a second pattern. A second patterned conductive layer is formed with at least a portion of the first and second patterned conductive layers overlapping each other forming an overlap region. A portion of the first or second pattern extends into the overlap region such that one portion of the overlap region includes the first and second dielectric thin films, and another portion of the overlap region includes only the first or second dielectric thin film.
申请公布号 US2016126101(A1) 申请公布日期 2016.05.05
申请号 US201414526652 申请日期 2014.10.29
申请人 Ellinger Carolyn Rae 发明人 Ellinger Carolyn Rae
分类号 H01L21/28;H01L21/02 主分类号 H01L21/28
代理机构 代理人
主权项 1. A method of producing a variable thickness inorganic thin film dielectric stack comprising: providing a substrate; forming a first patterned conductive layer on the substrate; forming a first patterned deposition inhibitor layer having a first pattern over the conductive layer and the substrate using a first additive patterning method; depositing a first dielectric thin film using ALD to form a first patterned conformal dielectric layer having the first pattern; removing the first patterned deposition inhibitor layer; forming a second patterned deposition inhibitor layer having a second pattern over the conductive layer and the substrate using a second additive patterning method; depositing a second dielectric thin film using ALD to form a second patterned conformal dielectric layer having the second pattern; forming a second patterned conductive layer, at least a portion of the first patterned conductive layer and a portion of the second patterned conductive layer overlapping each other forming an overlap region, a portion of the first pattern or a portion of the second pattern extending into the overlap region such that a first portion of the overlap region includes the first and the second dielectric thin films, and a second portion of the overlap region includes only one of the first or second dielectric thin films.
地址 Rochester NY US