ENHANCEMENT MODE INVERTER WITH VARIABLE THICKNESS DIELECTRIC STACK

摘要

An enhancement-mode inverter includes a load transistor and a drive transistor. The load transistor has a bottom gate architecture with a first source, a first drain, a load channel region, a first semiconductor layer, and a first gate electrode. A load gate dielectric is in the load channel region, and has a load dielectric thickness. The drive transistor has a bottom gate architecture with a second source, a second drain, a drive channel region, a second semiconductor layer, and a second gate electrode. A drive gate dielectric is in the drive channel region, and has a drive dielectric thickness less than the load dielectric thickness. The first source is electrically connected to the second drain and the first gate is electrically connected to the first drain. The load gate dielectric and the drive gate dielectric are part of a common shared dielectric stack.

主权项

1. An enhancement-mode inverter comprising:
a load transistor having a bottom gate architecture with a first source, a first drain, a load channel region, a load gate dielectric in the load channel region having a load dielectric thickness, a first semiconductor layer, and a first gate electrode; and a drive transistor having a bottom gate architecture with a second source, a second drain, a drive channel region, a drive gate dielectric in the drive channel region having a drive dielectric thickness less than the load dielectric thickness, a second semiconductor layer and a second gate electrode; wherein the first source is electrically connected to the second drain and the first gate is electrically connected to the first drain, and wherein the load gate dielectric and the drive gate dielectric are part of a common shared dielectric stack, and wherein the common shared dielectric stack includes a plurality of layers, and wherein one of the plurality of layers has a different pattern than another of the plurality of layers.