DUAL LAYER STACK FOR CONTACT FORMATION

摘要

A semiconductor structures includes a contact fabricated utilizing a multi material trench-layer. The multi material trench layer is utilized to form a contact trench and the contact trench is utilized to form the contact therein. The trench-layer includes a lower barrier trench layer and an upper photoprocessing layer. The photoprocessing layer is utilized pattern and form contact trench. The barrier layer protects an electroplating conductive layer utilized in forming the contact from corrosion that may occur during the removal of the photoprocessing layer.

主权项

1. A semiconductor device fabrication method comprising:
forming a liner layer upon a dielectric layer; forming an electrically conductive plating layer upon the liner layer; forming an epoxy trench barrier layer upon the plating layer; forming a photoresist layer upon the epoxy trench barrier layer; forming a contact trench within the photoresist layer and the epoxy trench barrier layer wherein the formed contact trench creates photoresist layer portions and epoxy trench barrier layer portions, and wherein the contact trench exposes a portion of the electrically conductive plating layer; plating a contact upon the exposed plating layer within the contact trench, and; subsequent to plating the contact upon the plating layer within the contact trench, removing the photoresist layer portions while maintaining the epoxy trench barrier layer portions.