| 发明名称 |
DEPOSITION METHOD FOR TUNGSTEN-CONTAINING FILM USING TUNGSTEN COMPOUND, AND PRECURSOR COMPOSITION FOR DEPOSITING TUNGSTEN-CONTAINING FILM, COMPRISING TUNGSTEN COMPOUND |
| 摘要 |
The present disclosure relates to a deposition method for a tungsten-containing film using a tungsten compound and a precursor composition for depositing the tungsten-containing film including the tungsten compound. |
| 申请公布号 |
US2016122867(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201414893427 |
申请日期 |
2014.05.26 |
| 申请人 |
UP CHEMICAL CO., LTD. |
发明人 |
HAN Won Seok;YOO Beom-Sang;LEE Hong-Joo |
| 分类号 |
C23C16/18;C07F11/00;C23C16/455 |
主分类号 |
C23C16/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A deposition method of a tungsten-containing film using a tungsten compound, comprising contacting a gas including the tungsten compound represented by the following Chemical Formula 1 with a surface of a substrate: wherein in the formula 1, each of R1 to R6 independently includes H or a C1-5 alkyl group, L includes a non-cyclic or cyclic neutral ligand having a carbon number ranging from 0 to 5 and including 1 to 3 nitrogens or oxygens. |
| 地址 |
Gyeonggi-do KR |
