| 发明名称 |
METHOD OF ETCHING ORGANIC FILM |
| 摘要 |
An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a processing vessel of a plasma processing apparatus which accommodates a processing target object. A processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, and plasma of the processing gas is generated. Further, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W, in the etching of the organic film. |
| 申请公布号 |
US2016126071(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201514926079 |
申请日期 |
2015.10.29 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Kitamura Akinori;Kariu Kosuke;Ozu Toshihisa;Lee Hai Woo |
| 分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of etching an organic film, comprising:
preparing a processing target object having an underlying layer, an organic film formed on the underlying layer, and a resist mask which is formed on the organic film such that the organic film is partially exposed; and etching the organic film within a processing vessel of a plasma processing apparatus which accommodates the processing target object therein, wherein a processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, plasma of the processing gas is generated, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W in the etching of the organic film. |
| 地址 |
Tokyo JP |
