| 发明名称 |
METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR |
| 摘要 |
Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vVv)xAly(N1-wOw)z (where 0.0<v<1.0, 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and “M” is one or two elements selected from Ti and Cr. The method includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-V—Al alloy sputtering target, wherein “M” is one or two elements selected from Ti and Cr. |
| 申请公布号 |
US2016125982(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201414895794 |
申请日期 |
2014.05.28 |
| 申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
Fujita Toshiaki;Tanaka Hiroshi;Nagatomo Noriaki |
| 分类号 |
H01C7/00 |
主分类号 |
H01C7/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: (M1-vVv)xAly(N1-wOw)z (where 0.0<v<1.0, 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and “M” is one or two elements selected from Ti and Cr. |
| 地址 |
Tokyo JP |
