SUBSTRATE WITH SILICON CARBIDE FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SUBSTRATE WITH SILICON CARBIDE FILM

摘要

A substrate with a silicon carbide film includes a silicon substrate, a SiC film, and a mask 4. The SiC film has a film 31 including openings 35 on the silicon substrate and a film 32 provided on the upper side of the film 31. The mask 4 has a mask 41 provided on the upper side of the silicon substrate and including openings 45 and a mask 42 covering at least part of the mask 41 located in the openings 35 and the side surfaces of the openings 35 and including openings 46. The width W1 of the opening 45, the thickness T1 (μm) of the mask 41, and the thickness D (μm) of the film 31 at a position corresponding to the opening 45 satisfy the following relationships: T1

主权项

1. A substrate with a silicon carbide film, comprising:
a silicon substrate; a first mask formed on part of the silicon substrate; a first silicon carbide film formed on the silicon substrate and on the first mask; a second mask formed on at least part of the first silicon carbide film; and a second silicon carbide film formed on the first silicon carbide film and on the second mask, wherein the first mask has multiple first openings where the silicon substrate is exposed, the first silicon carbide film is formed so as to cover the first openings and the first mask, and also has a concave portion with an inclined side surface on an upper portion of the first mask, and the second mask is formed on the concave portion.