METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR

摘要

In one embodiment, a semiconductor device may include a first transistor having a first current carrying electrode, a second current carrying electrode, and a control electrode; a first bipolar transistor having a collector coupled to the first current carrying electrode of the first transistor, a base coupled to the second current carrying electrode of the first transistor, and an emitter of the first bipolar transistor coupled to a first node of the semiconductor device. In an embodiment, the first node is connected to a terminal of a semiconductor package. An embodiment may include a semiconductor component coupled between the base of the first bipolar transistor and the emitter of the second bipolar transistor.

主权项

1. A bias resistor transistor semiconductor device comprising:
a base terminal; an emitter terminal; a collector terminal; a main bipolar transistor having a base, an emitter coupled to the emitter terminal, and a collector coupled to the collector terminal; a first resistor having a first terminal coupled to the base of the main bipolar transistor, and having a second terminal coupled to the base terminal; and a protection bipolar transistor having a collector coupled to the collector of the main bipolar transistor, a base coupled to the emitter of the main bipolar transistor, and an emitter coupled to the base terminal, the protection bipolar transistor having an emitter to collector region that is configured to operate in avalanche mode in response to an ESD event.