| 发明名称 |
TRANSISTOR AND FABRICATION METHOD THEREOF |
| 摘要 |
A method for forming transistors is provided. The method includes providing a substrate having a base and at least a fin on the base; and forming a gate layer on the fin, the gate layer has first side surfaces parallel to a longitudinal direction of the fin and second side surfaces perpendicular to the fin. The method also includes forming a protective layer on the first side surfaces of the gate layer to protect a vertex of the top of the gate layer from having EPI particles; and forming sidewall spacers on side surfaces of the protective layer and the second side surfaces of the gate layer. Further, the method includes forming a stress layer in the fin at both sides of the sidewall spacers and the gate layer. |
| 申请公布号 |
US2016126338(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201514920193 |
申请日期 |
2015.10.22 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
ZHAO JIE |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating transistors, comprising:
providing a substrate having a base and at least a fin on the base; forming at least a gate layer on the fin, the gate layer has first side surfaces parallel to a longitudinal direction of the fin and second side surfaces perpendicular to the longitudinal direction of the fin; forming a protective layer on the first side surfaces of the gate layer to protect vertexes of the top of the gate layer from having EPI particles; forming a sidewall spacer on side surfaces of the protective layer and the second side surfaces of the gate layer; and forming a stress layer in the fin at both sides of the sidewall spacer and the gate layer. |
| 地址 |
Shanghai CN |
