| 发明名称 |
System and Method for Damage Reduction in Light-Assisted Processes |
| 摘要 |
A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical. |
| 申请公布号 |
US2016126105(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201414528938 |
申请日期 |
2014.10.30 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Lin Yi-Hung;Lin Sheng-Shin;Hung Ying-Chieh;Huang Yu-Ting;Lee Tze-Liang |
| 分类号 |
H01L21/3105;H01L23/00;H01L23/532 |
主分类号 |
H01L21/3105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device, the method comprising:
providing a dielectric layer comprising a damaged surface; and repairing the damaged surface of the dielectric layer, wherein repairing the damaged surface comprises:
exposing the damaged surface of the dielectric layer to a precursor chemical;activating the precursor chemical using light energy, wherein activating the precursor chemical triggers a self-decomposition reaction in the precursor chemical; andfiltering out a spectrum of the light energy while activating the precursor chemical. |
| 地址 |
Hsin-Chu TW |
