| 摘要 |
The present invention relates to an electrode structure for an ultraviolet light emitting diode and a manufacturing method thereof. According to the present invention, provided is an electrode structure for an ultraviolet light emitting diode, comprising: a p-type first contact semiconductor layer consisting of (Al,In)_xGa_(1-x)N (0<=x<=1); a second contact semiconductor layer formed on the upper part of the first contact semiconductor layer, for reducing ohmic contact resistance with metal; a first metal oxide layer formed on the upper part of the second contact semiconductor layer and having a nano-sized metal inserted into oxide made of (Al,Mg)_xZn_(1-x)O (0<=x<=1); and a second metal oxide layer formed on the upper part of the first metal oxide layer, for reducing a difference in a refractive index between the first metal oxide layer and the outside thereof. The electrode structure for an ultraviolet light emitting diode and the manufacturing method thereof, according to the present invention, can enhance current spreading efficiency within a transparent electrode and current injection efficiency from an electrode to a semiconductor, and maximize photon extraction efficiency by using an oxide layer reducing a difference in a refractive index with the outside, thereby realizing a highly-efficient and highly-reliable ultraviolet light emitting diode. |
