发明名称 |
Method for making semiconductor structures with structural homogeneity |
摘要 |
Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free.
The method comprises the formation of a semiconductor layer (16) over a top surface of the substrate (12), the semiconductor layer (16) including at least two elements, the elements being distributed to define an initial compositional variation within the semiconductor layer, in which forming the semiconductor layer comprises forming the semiconductor layer (16) having a haze, and planarizing the top surface of the semiconductor layer (16) having a haze. |
申请公布号 |
EP2337062(A3) |
申请公布日期 |
2016.05.04 |
申请号 |
EP20110161669 |
申请日期 |
2004.01.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LIMITED |
发明人 |
WESTHOFF, RICHARD;VINEIS, CHRISTOPHER J;CURRIE, MATTHEW T;YANG, VICKY K;LEITZ, CHRISTOPHER W |
分类号 |
H01L21/02;C30B25/02;C30B29/52;H01L21/20;H01L21/205;H01L21/30;H01L21/324 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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