Metal gate and gate contact structure for FinFET

摘要

An embodiment includes a substrate, wherein a portion of the substrate extends upwards, forming a fin, a gate dielectric over a top surface and sidewalls of the fin, a liner overlaying the gate dielectric, and an uninterrupted metallic feature over the liner a portion of the liner overlaying the gate dielectric, wherein the liner extends from a top surface of the uninterrupted metallic feature and covers sidewalls of the metallic feature, and wherein the gate dielectric, liner, and uninterrupted metallic feature collectively form a gate, a gate contact barrier, and a gate contact.

主权项

1. A method for forming an integrated circuit (IC) structure comprising:
etching a substrate to form a fin; forming a gate dielectric over a top surface and sidewalls of the fin; forming dummy gate over the gate dielectric; forming an interlayer dielectric (ILD) over the dummy gate; patterning an opening in the ILD to expose the dummy gate; expanding the opening by removing the dummy gate; forming a liner covering a bottom surface, a top surface, and sidewalls of the opening; and filling the opening with a metallic material.