发明名称 Substrate processing apparatus
摘要 A substrate processing apparatus includes a processing unit performing a predetermined processing on a substrate; a transfer chamber; and a substrate accommodation unit including a substrate accommodation chamber communicating with the transfer chamber via a transfer opening, a gate provided at the transfer opening to separate the substrate accommodation chamber from the transfer chamber, and a gas supply unit supplying a gas into the substrate accommodation chamber. The substrate accommodation chamber accommodates therein substrates that have been processed by the processing unit, and the gas supply unit provides a gas flow suppressing an atmosphere of the transfer chamber from being introduced into the substrate accommodation chamber, thereby preventing undesired reaction between moisture in the atmosphere of the transfer chamber and deposits adhered on the processed substrates accommodated in the substrate accommodation chamber.
申请公布号 US9330950(B2) 申请公布日期 2016.05.03
申请号 US201012723950 申请日期 2010.03.15
申请人 TOKYO ELECTRON LIMITED 发明人 Wakabayashi Shinji
分类号 H01L21/677;H01J37/32 主分类号 H01L21/677
代理机构 Rothwell, Figg, Ernst & Manbeck, P.C. 代理人 Rothwell, Figg, Ernst & Manbeck, P.C.
主权项 1. A substrate processing apparatus comprising: a processing chamber for accommodating a substrate to be processed; a loading/unloading port configured to mount thereon a carrier accommodating therein a plurality of substrates; a transfer chamber including a transfer mechanism therein, the transfer mechanism transferring the substrate from the carrier in an atmospheric atmosphere; a load-lock chamber connected to the transfer chamber, the substrate being transferred to the processing chamber via the load-lock chamber; a substrate accommodation chamber accommodating substrates processed in the processing chamber and transferred by the transfer mechanism via the load-lock chamber, wherein the substrate accommodation chamber is positioned at a location spaced form the loading/unloading port, and wherein a transfer opening is provided between the substrate accommodation chamber and the transfer chamber; a vertically movable gate disposed inside the transfer chamber and separating the substrate accommodation chamber from the transfer chamber wherein the vertically movable gate includes a first side and an opposite second side, and wherein the first side faces toward an interior of the transfer chamber and the second side faces toward the substrate accommodation chamber, and wherein the vertically movable gate extends across the transfer opening between the substrate accommodation chamber and the transfer chamber such that portions of the vertically movable gate are provided both above and below the transfer opening in at least one position of the vertically movable gate; and a gas supply unit configured to supply a gas into the substrate accommodation chamber from an opposite side of the substrate accommodation chamber to the vertically movable gate, wherein the apparatus further includes an inert gas source coupled to the gas supply unit such that the gas supplied by the gas supply unit is an inert gas from the inert gas source, wherein the vertically movable gate has a slit-shaped opening extending in a horizontal direction and serving as a loading/unloading opening through which the processed substrates are transferred one at a time such that when a substrate is transferred between the transfer chamber and the substrate accommodation chamber the substrate passes through the slit-shaped opening and the transfer opening, wherein the processed substrates are vertically arranged in substantially parallel with each other in the substrate accommodation chamber, and wherein a gas flow gap is provided between the vertically movable gate and the substrate accommodation chamber on the second side of the vertically movable gate and along said portions of the vertically movable gate such that the gas traverses the substrate accommodation chamber from the opposite side of the substrate accommodation chamber, passes through the transfer opening, and is discharged into the transfer chamber via the gas flow gap when the gas is supplied from the gas supply unit.
地址 Tokyo JP