| 发明名称 | Oxide material and semiconductor device | ||
| 摘要 | Stable electrical characteristics are given to a transistor and a highly reliable semiconductor device is provided. In addition, an oxide material which enables manufacture of such a semiconductor device is provided. An oxide film is used in which two or more kinds of crystalline portions which are different from each other in a direction of an a-axis or a direction of a b-axis in an a-b plane (or the top surface, or the formation surface) are included, and each of the crystalline portions is c-axis aligned, has at least one of triangular atomic arrangement and hexagonal atomic arrangement when seen from a direction perpendicular to the a-b plane, a top surface, or a formation surface, includes metal atoms arranged in a layered manner, or metal atoms and oxygen atoms arranged in a layered manner along the c-axis, and is expressed as In2SnZn2O7(ZnO)m (m is 0 or a natural number). | ||
| 申请公布号 | US9331206(B2) | 申请公布日期 | 2016.05.03 |
| 申请号 | US201213444132 | 申请日期 | 2012.04.11 |
| 申请人 | Semiconductor Energy Laboratory Co., Ltd. | 发明人 | Yamazaki Shunpei;Nakashima Motoki |
| 分类号 | H01L29/786;C01G19/02 | 主分类号 | H01L29/786 |
| 代理机构 | Robinson Intellectual Property Law Office, P.C. | 代理人 | Robinson Eric J.;Robinson Intellectual Property Law Office, P.C. |
| 主权项 | 1. An oxide material comprising: two or more kinds of crystalline portions which are different from each other in a direction of an a-axis or a direction of a b-axis in an a-b plane, wherein each of the crystalline portions is c-axis aligned, has at least one of a triangular atomic arrangement and a hexagonal atomic arrangement when seen from a direction perpendicular to the a-b plane, and is expressed as In2SnZn2O7(ZnO)m (m is 0 or a natural number). | ||
| 地址 | Atsugi-shi, Kanagawa-ken JP | ||