Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same

摘要

Group III nitride semiconductor device structures are provided that include a silicon carbide (SiC) substrate and a Group III nitride epitaxial layer above the SiC substrate. The Group III nitride epitaxial layer has a dislocation density of less than about 4×108 cm−2 and/or an isolation voltage of at least about 50V.

主权项

1. A semiconductor device structure, comprising:
a silicon carbide substrate; and a gallium nitride (GaN) layer having a first surface adjacent the silicon carbide substrate and a second surface opposite the first surface above the silicon carbide substrate having a dislocation density that is less than about 4×108 cm−2 and an isolation voltage in a range between about 50 V and about 150V, wherein the GaN layer includes a transition metal dopant in a concentration range between about 2×1016 cm−3 and 2×1018 cm−3 that decreases within this range from the first surface towards the second surface by a factor of about 10 approximately every 0.4 μm in the GaN layer and has a thickness in a range between about 5 microns and about 20 microns.