发明名称 Light-emitting device and manufacturing method thereof
摘要 The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.
申请公布号 US9331249(B2) 申请公布日期 2016.05.03
申请号 US201414556032 申请日期 2014.11.28
申请人 EPISTAR CORPORATION 发明人 Tsai Fu Chun;Liao Wen Luh;Chen Shih I;Hsu Chia Liang;Lu Chih Chiang
分类号 H01L33/40;H01L33/42;H01L33/00;H01L33/22 主分类号 H01L33/40
代理机构 Muncy, Geissler, Olds & Lowe PC 代理人 Muncy, Geissler, Olds & Lowe PC
主权项 1. A light-emitting device comprising: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal element and a second metal layer comprising a second metal element, the first metal layer closer to the metal connecting structure than the second metal layer, and the second metal multilayer comprises a third metal layer comprising a third metal element and a fourth metal layer comprising a fourth metal element, the third metal layer closer to the second metal layer than the fourth metal layer, and the first metal element is different from the second metal element, and the third metal element is different from the fourth metal element, and wherein the metal connecting structure and the metal reflective layer comprise the same metal element.
地址 Hsinchu TW