Semiconductor device with multilayer contact and method of manufacturing the same

摘要

The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.

主权项

1. A bipolar transistor semiconductor device, comprising:
a first substrate layer including a collector region of a first conductivity type; a second substrate layer over and on the first substrate layer, the second substrate layer including a base region of a second conductivity type; an emitter region of the first conductivity type in an upper region of the second substrate layer; an emitter contact over the second substrate layer and coupled to the emitter region; a base contact over the second substrate layer and coupled to the base region; a passivation layer over the base contact; an extension contact over and electrically coupled to the emitter contact, wherein a bottom surface of the extension contact in contact with an upper surface of the emitter contact is oriented in a first plane, and the emitter contact includes a step extending above the first plane; an isolation layer over and on the second substrate layer, wherein the isolation layer separates the emitter contact and the base contact, and wherein the passivation layer is over the isolation layer.