3-dimensional (3D) non-volatile memory device and method of fabricating the same

摘要

Provided are 3D non-volatile memory devices and methods of fabricating the same. A 3D non-volatile memory device according to an embodiment of the present invention includes a plurality of conductive lines, which are separated from one another in parallel; a plurality of conductive planes, which extend across the plurality of conductive lines and are separated from one another in parallel; and non-volatile data storage layer patterns, which are respectively arranged at regions of intersection at which the plurality of conductive lines and the plurality of conductive planes cross each others.

主权项

1. A 3D non-volatile memory device comprising:
a plurality of conductive lines separated from one another in parallel; a plurality of conductive planes extending across the plurality of conductive lines and are separated from one another in parallel; non-volatile data storage layer patterns, each arranged at regions of intersection at which the plurality of conductive lines and the plurality of conductive planes cross each others; and selection diode layer patterns connected to the non-volatile data storage layer pattern in series by stacking the selection diode layer pattern and the non-volatile data storage layer pattern on each other, between the regions of intersection, wherein at least one of the non-volatile data storage layer patterns and the selection diode layer patterns surround the plurality of conductive lines.