发明名称 Charged particle beam device
摘要 Provided is a charged particle beam device with high sensitivity, capable of detecting charged particles emitted from a sample at high resolution. An absorption current detector arranged to contact with the sample makes an absorption current generated in the sample by an irradiated charged particle beam flow through the detector, thereby to detect the current. The charged particle beam scans the sample and the charged particle beam device acquires an absorption current image. In case the absorption current detector is arranged separated from the sample, the absorption current detector detects the incident charged particle beam as a signal current dependent on an angle θ formed in a direction from the irradiation position on the sample toward the absorption current detector relative to at least one of the normal line direction of the front surface of the sample and the incident direction of the charged particle beam.
申请公布号 US9330883(B2) 申请公布日期 2016.05.03
申请号 US201314382165 申请日期 2013.02.20
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 Nanri Terutaka;Tomimatsu Satoshi;Sekihara Isamu
分类号 H01J37/00;H01J37/244;H01J37/28;H01J37/317;H01J37/305 主分类号 H01J37/00
代理机构 Mattingly & Malur, PC 代理人 Mattingly & Malur, PC
主权项 1. A method for operating a charged particle beam device, wherein the changed particle beam device includes a charged particle beam irradiation unit for irradiating a sample with a charged particle beam; and an absorption current detector for detecting an absorption current generated in the sample by the irradiated charged particle beam, the method comprising: scanning, by the charged particle beam device, the sample with the charged particle beam to acquire an absorption current image, and configuring the absorption current detector to selectively: contact the sample and detect the absorption current flowing through the absorption current detector, orbe separated from the sample and detect an incident charged particle beam emitted from the sample by the irradiation of the charged particle beam, wherein the incident charged particle beam is incident on the absorption current detector and is detected as a signal current dependent on an angle formed in a direction from an irradiation position of the charged particle beam on the sample toward the absorption current detector relative to at least one of a normal line direction of a front surface of the sample and an incident direction of the charged particle beam.
地址 Tokyo JP
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