发明名称 Polarization device, method of manufacturing the same, liquid crystal device, and electronic apparatus
摘要 The wire grid type polarization device includes a substrate, and a metal layer formed on one face of the substrate in a substantially stripe shape in a plan view, a first dielectric layer provided on two side faces opposite to each other among a plurality of side faces of the metal layer and in a top part of the metal layer, and a second dielectric layer provided on the first dielectric layer. A substrate side end portion of the second dielectric layer is located between the one surface of the substrate and the top part of the first metal layerand a plurality of metal layers that includes a first metal layer having a first side face, a second side face opposed to the first side face, and a top part. First and second dielectric layers are provided in the first side face, the second side face, and the top part of the first metal layer. The first dielectric layer is provided between the first metal layer and the second dielectric layer. The optical absorption rate of the first dielectric layer is less than that of the second dielectric layer.
申请公布号 USRE45993(E1) 申请公布日期 2016.05.03
申请号 US201314075561 申请日期 2013.11.08
申请人 Seiko Epson Corporation 发明人 Kumai Yoshitomo
分类号 G02F1/1333;G02F1/1335;G02B5/30;G02F1/29 主分类号 G02F1/1333
代理机构 Workman Nydegger 代理人 Workman Nydegger
主权项 1. A polarization device comprising: a substrate; and a plurality of metal layers that is provided on one face of the substrate in a stripe shape and includes a first dielectric layer and a second dielectric layer, wherein an optical absorption rate of the second dielectric layer is higher than that of the first dielectric layer, in two side faces opposite to each other of a plurality of side faces of a first metal layer and in a top part of the first metal layer among the plurality of metal layers, the first dielectric layer included in the first metal layer is provided between the second dielectric layer included in the first metal layer and the first metal layer, and a substrate side end portion of the second dielectric layer included in the first metal layer is located between the one face of the substrate and the top part of the first metal layer.
地址 Tokyo JP