| 发明名称 |
MULTIPLE LAYER INTERFACE FORMATION FOR SEMICONDUCTOR STRUCTURE |
| 摘要 |
There is set forth herein a method of fabricating a contact interface formation. A layer of Ti metal can be deposited on a substrate and a layer of Ni metal can be deposited over the layer of Ti metal. An annealing process can be performed to form a contact interface formation having Ti in reacted form and Ni in reacted form. |
| 申请公布号 |
US2016118468(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201414523640 |
申请日期 |
2014.10.24 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
PATIL Suraj K.;CHI Min-hwa |
| 分类号 |
H01L29/45;H01L21/321;H01L21/285;H01L27/092;H01L21/8238 |
主分类号 |
H01L29/45 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabrication of a contact interface formation, the method comprising:
depositing a layer of Ti in metal form over a substrate; depositing a layer of Ni in metal form over the layer of Ti in metal form; and performing an annealing process to form a contact interface formation including Ti in reacted form and Ni in reacted form. |
| 地址 |
Grand Cayman KY |
