FinFET with an Asymmetric Source/Drain Structure and Method of Making Same

摘要

Embodiments of the present disclosure are a semiconductor device, a FinFET device, and a method of forming a FinFET device. An embodiment is a semiconductor device comprising a first semiconductor fin extending above a substrate, a first source region on the first semiconductor fin, and a first drain region on the first semiconductor fin. The first source region has a first width and the first drain region has a second width with the second width being different than the first width.

主权项

1. A method comprising:
etching a first recess in a first semiconductor fin; epitaxially growing a first semiconductor material in the first recess to form a first source region, the first source region having a first width; etching a second recess in the first semiconductor fin; epitaxially growing a second semiconductor material in the second recess to form a first drain region, the first drain region having a second width, the second width being smaller than the first width; and forming a first active gate over the first semiconductor fin, the first active gate being laterally between the first source region and the first drain region.