发明名称 |
BIPOLAR LOGIC GATES ON MOS-BASED MEMORY CHIPS |
摘要 |
A system uses both MOS-based and bipolar-based decoding circuitry in an address decoder for MOS-based memory. The system includes a MOS-based memory, which includes an array of a plurality of memory cells configured to store data, and an address decoder including MOS-based circuitry and bipolar logic circuitry. The address decoder is configured to accept a word comprising a plurality of bits and access the array of memory cells using the word. |
申请公布号 |
US2016118097(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
US201614990474 |
申请日期 |
2016.01.07 |
申请人 |
Elwha LLC |
发明人 |
Hyde Roderick A.;Kare Jordin T.;Wood, JR. Lowell L. |
分类号 |
G11C8/10 |
主分类号 |
G11C8/10 |
代理机构 |
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代理人 |
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主权项 |
1. A system, comprising:
a MOS-based memory, comprising:
an array of a plurality of memory cells configured to store data;an address decoder comprising:
MOS-based circuitry; andbipolar logic circuitry;wherein the address decoder is configured to:
accept a word comprising a plurality of bits; andaccess the array of memory cells using the word. |
地址 |
Bellevue WA US |