发明名称 BIPOLAR LOGIC GATES ON MOS-BASED MEMORY CHIPS
摘要 A system uses both MOS-based and bipolar-based decoding circuitry in an address decoder for MOS-based memory. The system includes a MOS-based memory, which includes an array of a plurality of memory cells configured to store data, and an address decoder including MOS-based circuitry and bipolar logic circuitry. The address decoder is configured to accept a word comprising a plurality of bits and access the array of memory cells using the word.
申请公布号 US2016118097(A1) 申请公布日期 2016.04.28
申请号 US201614990474 申请日期 2016.01.07
申请人 Elwha LLC 发明人 Hyde Roderick A.;Kare Jordin T.;Wood, JR. Lowell L.
分类号 G11C8/10 主分类号 G11C8/10
代理机构 代理人
主权项 1. A system, comprising: a MOS-based memory, comprising: an array of a plurality of memory cells configured to store data;an address decoder comprising: MOS-based circuitry; andbipolar logic circuitry;wherein the address decoder is configured to: accept a word comprising a plurality of bits; andaccess the array of memory cells using the word.
地址 Bellevue WA US