| 摘要 |
There is provided a silicon carbide semiconductor device having an improved switching characteristic. A MOSFET includes a silicon carbide layer, a gate insulating film, a gate electrode, and a source electrode. The silicon carbide layer includes a drift region, a body region, and a contact region. The source electrode is in contact with the contact region in a main surface. The MOSFET is configured such that contact resistance of the source electrode with respect to the contact region is not less than 1×10 −4 &OHgr;cm2 and not more than 1×10−1 &OHgr;cm2. Moreover, when viewed in a plan view of the main surface, an area of the contact region is not less than 10% of an area of the body region. |
