| 发明名称 |
METHOD FOR TREATING SURFACE OF SILICON-CARBIDE SUBSTRATE |
| 摘要 |
This method for treating a surface of a SiC substrate includes a first removal step in which a modified layer produced by subjecting the substrate (70) to mechanical polishing or chemical-mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. A second removal step in which macro-step bunching occurred in an epitaxial layer (71) is removed by heating the substrate (70) under Si vapor pressure may also be performed. Since the etching rate can be varied, etching rate in the first removal step is high, so that the modified layer can be removed in a short time. Meanwhile, etching rate in the second removal step is comparatively low, so that excessive removal of the epitaxial layer (71) can be prevented. |
| 申请公布号 |
US2016118257(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201414897342 |
申请日期 |
2014.06.06 |
| 申请人 |
KWANSEI GAKUIN EDUCATIONAL FOUNDATION |
发明人 |
Kaneko Tadaaki;Ohtani Noboru;Hagiwara Kenta |
| 分类号 |
H01L21/04;H01L21/02;H01L21/306 |
主分类号 |
H01L21/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for treating a surface of a SiC substrate having an off angle, the substrate having at least its surface made of a SiC (0001)-face, the method comprising:
performing a first removal step of removing a modified layer produced by subjecting the substrate to mechanical polishing or chemical-mechanical polishing by heating the substrate under Si vapor pressure. |
| 地址 |
Hyogo JP |
