发明名称 |
Memory Cells, Methods of Forming Memory Cells, and Methods of Programming Memory Cells |
摘要 |
Some embodiments include methods in which a memory cell is formed to have programmable material between first and second access lines, with the programmable material having two compositionally different regions. A concentration of ions and/or ion-vacancies may be altered in at least one of the regions to change a memory state of the memory cell and to simultaneously form a pn diode. Some embodiments include memory cells having programmable material with two compositionally different regions, and having ions and/or ion-vacancies diffusible into at least one of the regions. The memory cell has a memory state in which the first and second regions are of opposite conductivity type relative to one another. |
申请公布号 |
US2016118118(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
US201514982810 |
申请日期 |
2015.12.29 |
申请人 |
Micron Technology, Inc. |
发明人 |
Liu Jun;Sandhu Gurtej S. |
分类号 |
G11C13/00;H01L27/24;H01L45/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Boise ID US |