发明名称 Switching Components and Memory Units
摘要 Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with one or more of nitrogen, oxygen, germanium and carbon. Some embodiments include a memory unit which includes a memory cell and a select device electrically coupled to the memory cell. The select device has a selector region between a pair of electrodes. The selector region contains semiconductor doped with one or more of nitrogen, oxygen, germanium and carbon. The select device has current versus voltage characteristics which include snap-back voltage behavior.
申请公布号 US2016118441(A1) 申请公布日期 2016.04.28
申请号 US201614989625 申请日期 2016.01.06
申请人 Micron Technology, Inc. 发明人 Rawaswamy Durai Vishak Nirmal
分类号 H01L27/24;H01L45/00 主分类号 H01L27/24
代理机构 代理人
主权项 1. A switching component, comprising: a selector region between a pair of electrodes; and wherein the selector region comprises silicon doped with nitrogen.
地址 Boise ID US