发明名称 |
Switching Components and Memory Units |
摘要 |
Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with one or more of nitrogen, oxygen, germanium and carbon. Some embodiments include a memory unit which includes a memory cell and a select device electrically coupled to the memory cell. The select device has a selector region between a pair of electrodes. The selector region contains semiconductor doped with one or more of nitrogen, oxygen, germanium and carbon. The select device has current versus voltage characteristics which include snap-back voltage behavior. |
申请公布号 |
US2016118441(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
US201614989625 |
申请日期 |
2016.01.06 |
申请人 |
Micron Technology, Inc. |
发明人 |
Rawaswamy Durai Vishak Nirmal |
分类号 |
H01L27/24;H01L45/00 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
1. A switching component, comprising:
a selector region between a pair of electrodes; and wherein the selector region comprises silicon doped with nitrogen. |
地址 |
Boise ID US |