METHOD AND APPARATUS FOR WRITING TO A MAGNETIC TUNNEL JUNCTION (MTJ) BY APPLYING INCREMENTALLY INCREASING VOLTAGE LEVEL

摘要

A method of writing to magnetic tunnel junctions (MTJs) of a magnetic memory array includes storing in-coming data in a cache register, reading the present logic state of a first one of a set of at least two MTJs, the set of at least two MTJs including the first MTJ and a second MTJ. The in-coming data is to be written into the second MTJ. Further steps are storing the read logic state into a data register, swapping the contents of the data register and the cache register so that the cache register stores the read logic state and the data register stores the in-coming data, applying a first predetermined voltage level to the set of MTJs thereby causing the first MTJ to be over-written, applying a second predetermined voltage level to the set of MTJs, and storing the in-coming data into the second MTJ.

主权项

1. A method of writing to a magnetic tunnel junction (MTJ) of a magnetic memory array comprising:
a. selecting a word line that is coupled to a MTJ to be written; b. applying a voltage pulse, with a voltage level of Vx, to a bit line coupled to the MTJ; c. reading the state of the MTJ after applying the voltage pulse; d. comparing the state of the read MTJ to a value in a write latch; e. determining if a desired state is written to the read MTJ; and f. if the MTJ is determined not to be written to the desired state, increasing the voltage level and re-applying the voltage pulse with the increased voltage level and repeating steps c. through f. until the MTJ is written to the desired state.