| 摘要 |
The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKa min ) < pKa < 18 (pKa max )). The pKa values of the individual components are related to the pH of the polishing composition/slurry (ph slurry ) by the following equation: pKa min + 6 < pH slurry < pKa max - 6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than 100 ppm of halide ions, and operates in the 7-12 pH range. |
