| 摘要 |
The invention relates to a method for fabricating a semiconductor device. The method comprises forming a first etching layer and a second etching layer stacked on a substrate, and forming a recess region by etching the first and second etching layers under plasma generated from an etching gas including a compound. The compound comprises at least one of 1,1,1,2,3,3-hexafluoropropane, 2,2,2-trifluoroethane-1-thiol, 1,1,1,3,3-pentafluoropropane, 1,1,2,2,3-pentafluoropropane and 1,1,2,2-tetrafluoro-1-iodoethane, 2,3,3,3-tetrafluoropropene and 1,1-difluoroethene. |
| 主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
forming a first etching layer and a second etching layer stacked on a substrate; and forming a recess region by etching the first and second etching layers under plasma generated from an etching gas comprising a compound represented by Formula 1 or 2, wherein the first etching layer comprises a material different from that of the second etching layer, wherein R1 is F or CF3, R2 is CHF2, CH2F, I, SH or SOH, and R3 and R4 are independently selected from H, F or CHF2, and wherein R5 is F or CF3 and R6 is F, CHF2 or CH2F. |
