发明名称 |
IMAGING DEVICE AND IMAGE ACQUISITION DEVICE |
摘要 |
An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. The charge detection circuit includes a reset transistor that sets the pixel electrode at an initialization voltage at predetermined timing. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the initialization voltage and the counter voltage. |
申请公布号 |
US2016119563(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
US201514878180 |
申请日期 |
2015.10.08 |
申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
YAMADA TAKAYOSHI;TAKASE MASAYUKI;TAMAKI TOKUHIKO;MURAKAMI MASASHI |
分类号 |
H04N5/372;H04N5/359;H01L27/146;H04N5/378 |
主分类号 |
H04N5/372 |
代理机构 |
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代理人 |
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主权项 |
1. An imaging device, comprising:
at least one unit pixel cell, each of the at least one unit pixel cell comprising:
a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface;a pixel electrode located on the first surface;a shield electrode located on the first surface, the shield electrode being separated from the pixel electrode, a shield voltage being applied to the shield electrode;an upper electrode located on the second surface, the upper electrode opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode;a charge accumulation node electrically connected to the pixel electrode; anda charge detection circuit electrically connected to the charge accumulation node, wherein the charge detection circuit includes a reset transistor that sets the pixel electrode at an initialization voltage at predetermined timing, and an absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the initialization voltage and the counter voltage. |
地址 |
Osaka JP |