RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PRODUCING SAME

摘要

A resistive random access memory includes two electrode layers and a resistive switching layer mounted between the two electrode layers. The resistive switching layer consists essentially of insulating material with oxygen, metal material, and mobile ions. The polarity of the mobile ions is opposite to the polarity of oxygen ions. A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.

主权项

1. A resistive random access memory comprising:
two electrode layers; and a resistive switching layer mounted between the two electrode layers, with the resistive switching layer consisting essentially of insulating material with oxygen, metal material, and mobile ions, and with a polarity of the mobile ions being opposite to a polarity of oxygen ions.