METHOD FOR CULTIVATING BETA-Ga2O3 SINGLE CRYSTAL, AND BETA-Ga2O3-SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME

摘要

Provided is one embodiment which is a method for growing a β-Ga2O3-based single crystal which uses the EFG method and includes raising a Ga2O3 melt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the Ga2O3-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the Ga2O3-based melt so as to grown a β-Ga2O3 single crystal.

主权项

1. A method for growing a β-Ga2O3-based single crystal, comprising:
using EFG method;
raising a Ga2O3-based melt inside a crucible up to an opening of a die via a slit of the die such that a seed crystal is contacted with the Ga2O3-based melt in the opening of the die with a horizontal position of a seed crystal shifted in a width direction from a center in the width direction of the die; andpulling up the seed crystal contacting the Ga2O3-based melt so as to grow a β-Ga2O3-based single crystal.