METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a fine shape, and to provide a transistor with a small channel length.SOLUTION: A method of manufacturing a semiconductor device includes: forming a semiconductor on a substrate; depositing a first conductor on the semiconductor; depositing a first insulator on the first conductor; depositing a resist on the first insulator; exposing and developing the resist to expose a part of the first insulator while leaving a second region and a third region; applying a bias in a direction vertical to an upper surface of the substrate; generating plasma by a gas containing carbon and halogen; and depositing an organic compound and etching the organic compound, by the plasma. With respect to the organic compound, an etching rate is higher than a deposition rate at an exposed part of the first insulator, and the deposition rate is higher than the etching rate at a lateral face of the second region.SELECTED DRAWING: Figure 1