DRIVE CONTROL METHOD OF POWER SEMICONDUCTOR MODULE AND CONTROL CIRCUIT OF POWER SEMICONDUCTOR MODULE

摘要

An IGBT provided on the high voltage side uses the sensing function of the IGBT to detect a current and prevents the IGBT from breaking due to an overcurrent through a gate drive unit when the current detected by the short-circuit protection unit is determined to be an overcurrent. When detecting an overcurrent, the short-circuit protection unit outputs an alarm signal to a composition unit. Also, it detects the temperature of the power semiconductor module by using a temperature detection element, converts the detected temperature into a digital signal in the temperature information generating unit, and outputs the digitized temperature information to the composition unit. The composition unit composites the temperature information and the alarm signal and one resultant composite output is transmitted to a control unit on the low voltage side.

主权项

1. A drive control method of a power semiconductor module in which a drive control circuit that includes a gate drive unit, a protection unit, a temperature information generating unit and a composition unit, the power semiconductor module are arranged on a high voltage side, and a control unit that controls the drive control circuit is arranged on a low voltage side, the method comprising the steps of:
the gate drive unit applying a prescribed voltage to a gate of a power semiconductor device and controlling ON and OFF of the power semiconductor device; the protection unit responding to an abnormal state of the power semiconductor device and outputting an alarm signal when an abnormal state has been detected; the temperature information generating unit converting into a digital signal, a temperature detected by a temperature detection element arranged on a board of the power semiconductor module and generating temperature information; and inputting from the power semiconductor module to the composition unit the alarm signal and temperature information generated by the temperature information generating unit; compositing by the composition unit the inputted alarm signal and temperature information; and outputting the composited temperature information and alarm signal to one insulation element provided between the high voltage side and the low voltage side.