METHOD FOR MANUFACTURING A RESISTIVE DEVICE FOR A MEMORY OR LOGIC CIRCUIT

摘要

The invention relates to a method for manufacturing a resistive device, comprising the following steps: depositing a first electrically conductive layer on a substrate; forming an engraving mask on the first conductive layer; engraving the first conductive layer through the mask, such as to obtain a plurality of electrically conductive pillars (110) separated from one another; and forming storage elements with variable electrical resistance at the tops of the conductive pillars (110), such that each storage element is supported by one of the conductive pillars, the step of forming the storage elements comprising the following operations: depositing a first layer (121) by non-collimated cathode sputtering at normal incidence relative to the substrate; and depositing a second layer on the first layer by cathode sputtering, the second layer comprising a first pulverised chemical species at oblique incidence.